Fairchild Semiconductor fds6875 free download

File name fds6875.pdf

November 1998 FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are -6 A, -20 V. RDS(ON) = 0.030 @ VGS = -4.5 V, produced using Fairchild Semiconductor's advanced RDS(ON) = 0.040 @ VGS = -2.5 V. PowerTrench process that has been especially tailored to Low gate charge (23nC typical). minimize the on-state resistance and yet maintain low gate charge for superior switching performance. High performance trench technology for extremely low These devices are well suited for portable electronics RDS(ON). applications: load switching and power management, battery charging and protection circuits. High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D2 5 4 D1 S D1 FD 75 6 3 68 7 2 G2 S2 G1 8 1 SO-8 pin 1 S1 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDS6875 Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage